By Topic

A design consideration on P-well structure for solid-state image sensors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
A. Kohno ; NEC Corporation, Kawasaki, Japan ; N. Teranishi ; Y. Ishihara

The P-well structure has been widely used in solid state image sensors to suppress blooming and smear. This structure, however, suffers from saturation level shading, flicker and saturation level fixed pattern noise. This work clarifies that the P-well potential sway, due to readout pulse feeding, brings about the shading and the flicker. and the impurity striation in silicon substrate causes the saturation fixed pattern noise. To eliminate the problems, a new structure and a new driving mode are proposed. As a result, the shading and the fixed pattern noise were reduced to a practically negligible level, and the flicker was completely suppressed.

Published in:

Electron Devices Meeting, 1984 International  (Volume:30 )

Date of Conference: