By Topic

Optimum design of power MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
P. L. Hower ; Unitrode Corporation, Watertown, Mass. ; T. M. S. Heng ; C. Huang

Three cell geometeries (rectangle, square and hexagon) have been investigated using a lumped Rdsmodel. It is demonstrated that for each geometry one can calculate a spacing of the p-well diffusions that minimizes Rds. This optimum spacing is a function of the vertical and lateral p-well dimensions, the desired breakdown voltage, and, in some cases, the average current density in the cell. It is shown that in choosing the minimum Rdsfor the typical range of breakdown voltages (50- 1000V) and realizable cell sizes (20 to 40 µm), the square gives a smaller Rdsthan the rectangle, and the hexagon gives a smaller resistance than the square. Therefore, the hexagon is the preferred geometry for these situations.

Published in:

Electron Devices Meeting, 1983 International  (Volume:29 )

Date of Conference: