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Functional integration of power MOS and bipolar devices

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1 Author(s)
Tihanyi, J. ; Siemens AG, Munich, Germany

The development of vertical power MOSFETs has made it possible for MOS and bipolar functions to be combined advantageously. The SIPMOS (Siemens Power MOS) technique is eminently suitable for this purpose. Vertical MOSFET-triggered thyristors, optically coupled lateral thyristors with MOS input and optically coupled MOS triacs have been implemented and investigated. The common advantages of functionally integrated MOS-bipolar structures are the high input sensitivity, high dV/dt immunity and excellent di/dt capability.

Published in:

Electron Devices Meeting, 1980 International  (Volume:26 )

Date of Conference:

1980

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