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A new complementary transistor structure for analog integrated circuits

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4 Author(s)
Kikkawa, T. ; Nippon Electric Co., Ltd., Kawasaki City, Japan ; Suganuma, T. ; Tanaka, K. ; Hara, T.

A new complementary transistor structure has been developed. This paper presents a new technique which provides a fully complementary transistor structure for analog integrated circuits. The pnp transistor is fabricated by triple diffusion process in n type epitaxial layer on p type substrate, and is isolated from the substrate by inserting n- ion implanted layer between p+ collector buried layer and the substrate. This technique results in 5 to 10 times improvement in gain bandwidth product fT, maximum collector current IC(max)and collector saturation voltage VCE(sat)in comparison with conventional pnp transistors. Consequently, a fully complementary pnp transistor to npn transistors can be obtained.

Published in:

Electron Devices Meeting, 1980 International  (Volume:26 )

Date of Conference:

1980