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A symmetrical bipolar structure

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4 Author(s)
D. D. Tang ; IBM T. J. Watson Research Center, Yorktown Heights, N.Y. ; V. J. Silvestri ; H. N. Yu ; A. Reisman

This paper presents symmetrical bipolar-transistor structures suitable for bilateral operation. Such structures were fabricated using a technique of simultaneous-growth of epitaxial and polycrystalline Si on a stack structure. Vertical symmetrical transistors have been built and showed an emitter-base diode breakdown voltage of 7V, a current gain of 17.

Published in:

Electron Devices Meeting, 1980 International  (Volume:26 )

Date of Conference: