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An integrated 5 GHz low-noise amplifier with 5.5 kV HBM ESD protection in 90 nm RF CMOS

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9 Author(s)
Linten, D. ; Inter-Univ. Micro-Electron. Center, Leuven, Belgium ; Thijs, S. ; Jeamsaksiri, W. ; Ramos, J.
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A fully integrated 5 GHz low-power electrostatic discharge (ESD)-protected low-noise amplifier (LNA) in 90 nm CMOS is presented. This 9 mW LNA, with a 1.2 volt supply voltage, features a 12 dB power gain and 3.4 dB noise figure, while maintaining an input return loss below -20 dB. The LNA is ESD protected up to 5.5 kV human body model (HBM) using an on-chip inductor and clamping diodes, implemented as "plug-and-play" components. To the authors' knowledge, this LNA achieves the highest ever-reported ESD protection level in any 90 nm RF CMOS technology.

Published in:

VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on

Date of Conference:

16-18 June 2005

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