By Topic

A retention-aware test power model for embedded SRAM

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Baosheng Wang ; Dept. of Electr. & Comput. Eng., British Columbia Univ., Vancouver, BC, Canada ; J. Yang ; Yuejian Wu ; A. Ivanov

This paper addresses the test power model problem for embedded SRAMs (e-SRAMs). Previous researches treat e-SRAMs the same as other SoC core and use a "single-rectangle" power model to describe their test power consumption. This leads to significant waste of test time since e-SRAM test usually includes a long period of "zero" power consumption for the detection of data retention faults, This paper takes advantage of this "zero" power period and proposes a "retention-aware" test power model for e-SRAMs. The proposed model is evaluated and its impact on test time reduction is reported for various scenarios in terms of retention test duration, memory capacities, test algorithm complexities, etc. A formula is derived to predict the maximum test time reduction when the "zero" power period is fully utilized in a SoC environment.

Published in:

Proceedings of the ASP-DAC 2005. Asia and South Pacific Design Automation Conference, 2005.  (Volume:2 )

Date of Conference:

18-21 Jan. 2005