By Topic

Comparative study of the switching energy losses between Si PiN and SiC Schottky diode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yahaya, N.Z. ; Universiti Teknologi Petronas, Malaysia ; Khoo Choon Chew

paper is to compare the switching energy losses of the silicon carbide Schottky diode with the silicon PiN diode. The comparison is done using an inductive load chopper circuit simulated with Pspice, a type of circuit analysis software. Both diode models used for the simulation are from Infineon; the silicon carbide Schottky (SDP04S60, 4 A/600 V) and silicon PiN (IDP06E60, 6 A/600 V).

Published in:

Power and Energy Conference, 2004. PECon 2004. Proceedings. National

Date of Conference:

29-30 Nov. 2004