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Etch chamber condition-based process control model for shallow trench isolation trench depth control

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2 Author(s)
Gaddam, S. ; Kilby Center, Texas Instrum. Inc., Dallas, TX ; Braun, M.W.

This paper discusses the development and implementation of an etch chamber condition-based process control model for shallow trench isolation (STI) trench depth (TD) control The novel aspects of the controller are discussed, including PM cycle-based tuning, and measures for excursion protection. The implementation has eliminated the need for manual process recipe adjustment and improved process capability by approximately 30%. Actual process data from pre- and post-implementation demonstrate the efficacy of the proposed approach

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 2005 IEEE/SEMI

Date of Conference:

11-12 April 2005