By Topic

Comparative study of ZnO and GaN films grown by MOCVD

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wang Li ; Educ. Minist. Eng. Res. Center for Luminescence Materials & Devices, Nanchang Univ., China ; Pu Yong ; Mo Chunlan ; Fang Wenqing
more authors

ZnO and GaN films were grown by MOCVD. AFM, DCXRD and photoluminescence were used to study the surface morphologies, structural and optical properties of the films. By a comparison of the measurement results, it was shown that the structural and optical properties of the ZnO films are superior to the GaN films. The (102) FWHM and the free/bound exciton intensity ratio of the ZnO films are the best results ever reported for ZnO films. To evaluate the overall quality of the GaN films, an InGaN/GaN MQW LED was fabricated and the LED showed good I-V characteristics and its light output power was 6 mW at 20 mA, which indicated the good quality of the GaN layers and then indirectly suggested the high quality of the ZnO films.

Published in:

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on  (Volume:3 )

Date of Conference:

18-21 Oct. 2004