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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:17 Issue:3 Help

Characteristics of a high-speed passively mode-locked surface-emitting semiconductor InGaAs laser diode

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7 Author(s)
Qiang Zhang ; Dept. of Phys., Brown Univ., Providence, RI, USA ; Jasim, K. ; Nurmikko, A.V. ; Ippen, E.
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We have studied the performance of the recently demonstrated high-speed passively mode-locked 980-nm vertical cavity diode lasers (pulsewidth down to τp∼15 ps, repetition rate up to 15 GHz) by investigating the dynamics of the saturable p-i-n multiple quantum well InGaAs absorber. The impact of the absorber on the noise characteristics of these new compact short pulse sources is also reported.

Published in:
Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 3 )

Date of Publication: March 2005

Page(s):
525 - 527
ISSN :
1041-1135
INSPEC Accession Number:
8321480
Digital Object Identifier :
10.1109/LPT.2004.841024
Product Type:
Journals & Magazines
Date of Current Version :
22 February 2005
Issue Date :
March 2005
Sponsored by :
IEEE Photonics Society

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