Optical gain in an interband-resonant-tunneling-diode

A new concept is presented for the generation of optical gain within an interband-resonant-tunneling-diode (I-RTD). Model equations are derived in terms of material and structure parameters for predicting the optical gain in an I-RTD device constructed of InAs/AlGaSb layers. Simulation results suggest that gain in this I-RTD can be 40 times larger than that of a quantum-well laser based on GaAs/AlGaAs.