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Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation

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7 Author(s)
Wei-Yip Loh ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Byung Jin Cho ; Moon Sig Joo ; Ming-Fu Li
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Charge trapping and breakdown mechanism in p- and n-channel MOSFETs with an HfAlxOy and TaN metal electrode are investigated. Using carrier separation measurement technique, it is possible to clearly distinguish two different breakdown mechanisms: a high-K bulk initiated and an interfacial layer initiated breakdown. A model of charge trapping at different spatial locations in HfAlxOy with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.

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IEEE Transactions on Device and Materials Reliability  (Volume:4 ,  Issue: 4 )