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MOSFET linearity performance degradation subject to drain and gate voltage stress

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3 Author(s)
Chuanzhao Yu ; Electr. & Comput. Eng. Dept., Univ. of Central Florida, Orlando, FL, USA ; J. S. Yuan ; Hong Yang

Device parameters degradation of nonlinear elements subject to drain and gate voltage stress is examined experimentally. Analysis of metal-oxide-semiconductor field-effect transistor linearity degradation due to stress is given. Effects on radio frequency (RF) circuit linearity are investigated systematically through a SpectreRF simulation based on measured device data.

Published in:

IEEE Transactions on Device and Materials Reliability  (Volume:4 ,  Issue: 4 )