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Statistical design and optimization of SRAM cell for yield enhancement

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3 Author(s)
Mukhopadhyay, S. ; Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Mahmoodi, H. ; Roy, K.

We have analyzed and modeled the failure probabilities of SRAM cells due to process parameter variations. A method to predict the yield of a memory chip based on the cell failure probability is proposed. The developed method is used in an early stage of a design cycle to minimize memory failure probability by statistically sizing of SRAM cell.

Published in:

Computer Aided Design, 2004. ICCAD-2004. IEEE/ACM International Conference on

Date of Conference:

7-11 Nov. 2004