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A 2T1D dynamic memory cell with two transistors (T) and a gated diode (D) is presented. The gated diode acts as a nonlinear capacitance which amplifies the internal stored voltage in a read operation, leading to high performance, higher S/N ratio, and low voltage operation. Details about the gated diode structure, its principle of operations, the memory cell circuits and the array structure are presented, followed by hardware results.
Date of Conference: 17-19 June 2004