Referenced Items are not available for this document.
A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward-biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.
Published in:
Electron Device Letters, IEEE
(Volume:25
,
Issue:
9
)
Date of Publication: Sept. 2004
- Page(s):
- 646 - 648
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8085507
- Digital Object Identifier :
- 10.1109/LED.2004.833845
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 30 August 2004
- Issue Date :
- Sept. 2004
- Sponsored by :
- IEEE Electron Devices Society
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