Referenced Items are not available for this document.
In this letter, we developed a new self-aligned Schottky barrier source and ohmic body contact (SSOB) method that can effectively suppress the floating-body effect in poly-Si thin-film transistors (TFTs). Experimental results show that the SSOB-TFTs give higher output resistance, less threshold voltage variation, improved subthreshold characteristics, and larger breakdown voltage compared with conventional TFTs. The characteristics of the SSOB-TFTs are suitable for high-performance driving TFTs with a high output resistance and large breakdown voltage.
Published in:
Electron Device Letters, IEEE
(Volume:25
,
Issue:
9
)
Date of Publication: Sept. 2004
- Page(s):
- 634 - 636
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8085503
- Digital Object Identifier :
- 10.1109/LED.2004.834635
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 30 August 2004
- Issue Date :
- Sept. 2004
- Sponsored by :
- IEEE Electron Devices Society
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