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In this letter, we have fabricated a functional FinFET ring oscillator with a physical gate length of 25 nm and a fin width of 10 nm, the smallest ever reported. We demonstrate that these narrow (Wfin = 10 nm) and tall (Hfin = 60 - 80 nm) fins can be reliably etched with controlled profiles and that they are required to keep the short-channel effects under control, resulting in drain-induced barrier leakage characteristics of 45 mV/V at Vdd = 1 V and Lg = 25 nm for the nFET. For these ultrathin (10 nm) fins, we have succeeded in properly setting the VT at 0.2 V without the use of metal gates. In addition to ring oscillators, we also have obtained excellent pFET FinFET devices at wider fin widths (Wfin = 65 nm) with Idsat = 380 μA/μm at Ioff = 60 nA/μm and Vdd = -1.2 V.