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N-type Schottky barrier source/drain MOSFET using ytterbium silicide

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10 Author(s)
Shiyang Zhu ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Shanghai, China ; Chen, J.H. ; Li, M.-F. ; Lee, S.J.
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Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, which is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2 - x silicided N-SSDT has demonstrated a very promising characteristic with a recorded high Ion/loff ratio of ∼107 and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2 - x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 8 )

Date of Publication:

Aug. 2004

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