By Topic

Tradeoff between mobility and subthreshold characteristics in dual-channel heterostructure n- and p-MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

The mobility and subthreshold characteristics of TiN-gate, dual-channel heterostructure MOSFETs consisting of strained-Si-Si0.4Ge0.6 on relaxed Si0.7Ge0.3 are studied for strained-Si cap layer thicknesses ranging from 3 to 10 nm. The thinnest Si cap sample (3 nm) yields the lowest subthreshold swing (80 mV/dec) and the highest hole mobility enhancement (2.3X at a vertical effective field of 1 MV/cm). N-MOSFETs show the expected electron mobility enhancement (1.8X) for 10- and 5-nm-thick Si cap samples, which reduces to 1.6X for an Si cap thickness of 3 nm. For Si cap and gate oxide thicknesses both equal to 1 nm, simulations predict a moderate degradation in p-MOSFET subthreshold swing, from 73 to 85 mV/dec, compared to that for the Si control.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 8 )