By Topic

Fully silicided NiSi:Hf-LaAlO3/SG-GOI n-MOSFETs with high electron mobility

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yu, D.S. ; Nano Sci. Technol. Center, Univ. Syst. of Taiwan, Hsinchu, Taiwan ; Chiang, K.C. ; Cheng, C.F. ; Chin, Albert
more authors

We have integrated the low work function NiSi:Hf gate on high-κ LaAlO3 and on smart-cut Ge-on-insulator (SC-GOI) n-MOSFETs. At 1.4-nm equivalent oxide thickness, the NiSi:Hf-LaAlO3/SC-GOI n-MOSFET has comparable gate leakage current with the control Al gate on LaAlO3-Si MOSFETs that is ∼5 orders of magnitude lower than SiO2. In addition, the LaAlO3/SC-GOI n-MOSFET with a metal-like fully NiSi:Hf gate has high peak electron mobility of 398 cm2/Vs and 1.7 times higher than LaAlO3-Si devices.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 8 )