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10-kV, 123-mΩ·cm2 power DMOSFETs in 4H-SiC are demonstrated. A 42% reduction in Ron,sp, compared to a previously reported value, was achieved by using an 8 × 1014 cm-3 doped, 85-μm-thick drift epilayer. An effective channel mobility of 22 cm2/Vs was measured from a test MOSFET. A specific on-resistance of 123 mΩ·cm2 were measured with a gate bias of 18 V, which corresponds to an Eox of 3 MV/cm. A leakage current of 197 μA was measured at a drain bias of 10 kV from a 4H-SiC DMOSFET with an active area of 4.24 × 10-3 cm2. A switching time of 100 ns was measured in 4.6-kV, 1.3-A switching measurements. This shows that the 4H-SiC power DMOSFETS are ideal for high-voltage, high-speed switching applications.
Date of Publication: Aug. 2004