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Ge-blade damascene process for post-CMOS integration of nano-mechanical resonators

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5 Author(s)
Takeuchi, H. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA ; Quevy, Emmanuel ; Bhave, S.A. ; Tsu-Jae King
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A process is demonstrated for fabrication of high-frequency mechanical resonators applicable for on-chip radio-frequency communication. This Ge-blade damascene process (GBDP) provides ultranarrow lateral gaps using lithographically defined sacrificial Ge blades (high-aspect-ratio Ge features). The use of Ge as the sacrificial material eliminates the need for a hydrogen fluoride etch process to release the mechanical structures, and, hence, simplifies the integration of microelectromechanical (MEMS) with CMOS circuitry. Polycrystalline silicon-germanium (poly-SiGe) is used as the structural material in order to keep the thermal budget low (maximum temperature 425 °C), so as to be compatible with CMOS metallization stacks. A 24-MHz double-ended tuning fork resonator was successfully fabricated using the GBDP.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 8 )