By Topic

Self-aligned InP DHBT with fτ and fmax over 300 GHz in a new manufacturable technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

19 Author(s)
He, G. ; Vitesse Semicond. Corp., Camarillo, CA, USA ; Howard, J. ; Le, M. ; Partyka, P.
more authors

We report self-aligned indium-phosphide double-heterojunction bipolar transistor devices in a new manufacturable technology with both cutoff frequency (fτ) and maximum oscillation frequency (fmax) over 300 GHz and open-base breakdown voltage (BVceo) over 4 V. Logic circuits fabricated using these devices in a production integrated-circuit process achieved a current-mode logic ring-oscillator gate delay of 1.95 ps and an emitter-coupled logic static-divider frequency of 152 GHz, both of which closely matched model-based circuit simulations.

Published in:

Electron Device Letters, IEEE  (Volume:25 ,  Issue: 8 )