Referenced Items are not available for this document.
DC drift characteristics of z-cut LiNbO3 modulators with oxide buffer layers were studied with respect to their acceleration factors and long-term reliability. Analysis of more than 120 data points of measured drift tests indicate a slight nonlinear contribution by the starting bias voltage Vs to drift acceleration, with a factor equal to Vs1.27. However, the observed nonlinearity is shown to have little affect on reliability estimations due to a dominant contribution from temperature activation energy; Ea=1.1 eV. The dc drift failure rates are estimated to be on the order of tens of failures in time for 20 years at 55°C.
Published in:
Photonics Technology Letters, IEEE
(Volume:16
,
Issue:
7
)
Date of Publication: July 2004
- Page(s):
- 1655 - 1657
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 8053304
- Digital Object Identifier :
- 10.1109/LPT.2004.829545
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 28 June 2004
- Issue Date :
- July 2004
- Sponsored by :
- IEEE Photonics Society
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