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DC drift of Z-cut LiNbO3 modulators

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4 Author(s)
H. Nagata ; JDS Uniphase Corp., Bloomfield, CT, USA ; G. D. Feke ; Yagang Li ; W. R. Bosenberg

DC drift characteristics of z-cut LiNbO3 modulators with oxide buffer layers were studied with respect to their acceleration factors and long-term reliability. Analysis of more than 120 data points of measured drift tests indicate a slight nonlinear contribution by the starting bias voltage Vs to drift acceleration, with a factor equal to Vs1.27. However, the observed nonlinearity is shown to have little affect on reliability estimations due to a dominant contribution from temperature activation energy; Ea=1.1 eV. The dc drift failure rates are estimated to be on the order of tens of failures in time for 20 years at 55°C.

Published in:

IEEE Photonics Technology Letters  (Volume:16 ,  Issue: 7 )