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Room-temperature operation of InP-based InAs quantum dot laser

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7 Author(s)
Jin Soo Kim ; Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea ; Jin Hong Lee ; Sung Ui Hong ; Won Seok Han
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A ridge waveguide quantum dot (QD) laser with a stripe width of 15 μm was fabricated by using the seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP [001] substrate. Room-temperature lasing operation was observed at 1.501 μm, which is the first observation from the InAs QDs with the InAlGaAs-InAlAs structure. The characteristic temperature of the InAs QD laser calculated from the temperature dependence of threshold current density was 135 K in the temperature range from 200 K to room temperature.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 7 )