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The IGCT test platform for voltage source inverters

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5 Author(s)
Yuan Liqiang ; Dept. of Electr. Eng., Tsinghua Univ., Beijing, China ; Zhao Zhengming ; Bai Hua ; Li Chongjian
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This paper presents the design, simulation and implementation of circuit for IGCT (integrated gate commutated thyristor) test platform, which is an equivalent circuit for the common commutation types occurring in the 2-or 3-level VSI (voltage source inverter) circuits. Based on the equivalence, the design of the test circuit for 5SHX08F4502 without switching-off snubber, including the topology and the element parameters, especially the ones of stray inductors, is described in detail. The test circuit is simulated with the package PSIM, and the IGCT model is functional level. The simulation and experiment results are both given in the paper.

Published in:

Power Electronics and Drive Systems, 2003. PEDS 2003. The Fifth International Conference on  (Volume:2 )

Date of Conference:

17-20 Nov. 2003