Referenced Items are not available for this document.
Using standard planar 22-nm-nMOS devices featuring a typical metalurgical length lower than 10 nm, we investigated the impact of nanoscale phenomena on device behavior. The data show that direct source-drain tunneling dominates the device leakage below 250 K and that carrier transport approaches the ballistic limit. The significant contribution of access resistance is revealed by low-temperature measurements below the superconducting transition of the cobalt disilicide contacts.
Published in:
Nanotechnology, IEEE Transactions on
(Volume:3
,
Issue:
1
)
Date of Publication: March 2004
- Page(s):
- 105 - 109
- ISSN :
- 1536-125X
- INSPEC Accession Number:
- 7944385
- Digital Object Identifier :
- 10.1109/TNANO.2003.820786
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 30 March 2004
- Issue Date :
- March 2004
- Sponsored by :
- IEEE Nanotechnology Council
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