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Experimental study of transport in nanoscale planar MOSFETs near the ballistic limit

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4 Author(s)
F. Boeuf ; STMicroelectronics, Crolles, France ; X. Jehl ; M. Sanquer ; T. Skotnicki

Using standard planar 22-nm-nMOS devices featuring a typical metalurgical length lower than 10 nm, we investigated the impact of nanoscale phenomena on device behavior. The data show that direct source-drain tunneling dominates the device leakage below 250 K and that carrier transport approaches the ballistic limit. The significant contribution of access resistance is revealed by low-temperature measurements below the superconducting transition of the cobalt disilicide contacts.

Published in:

IEEE Transactions on Nanotechnology  (Volume:3 ,  Issue: 1 )