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Using standard planar 22-nm-nMOS devices featuring a typical metalurgical length lower than 10 nm, we investigated the impact of nanoscale phenomena on device behavior. The data show that direct source-drain tunneling dominates the device leakage below 250 K and that carrier transport approaches the ballistic limit. The significant contribution of access resistance is revealed by low-temperature measurements below the superconducting transition of the cobalt disilicide contacts.
Date of Publication: March 2004