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80-ps and 4-ns pulse-pumped gains in a GaP-AlGaP semiconductor Raman amplifier

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4 Author(s)
Saito, S. ; Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan ; Suto, K. ; Kimura, T. ; Jun-Ichi Nishizawa

The characteristic of 80-ps mode-locked (ML) pulse-pumped gain, which results in a decline that changes from a linear gradient to a square-root gradient at introduced pump densities exceeding 10 dB, makes it difficult to develop pulse-pumped gains for high efficiency amplification. To overcome this disadvantage with pumping, we compared an 80-ps ML pulse and 4-ns Q-switched pulse in a straight waveguide. The amplification of the 4-ns pulse was linear and had a maximum gain of 23.3 dB at an introduced pump density of 1.4 W/μm2 in a straight waveguide. The gain was more efficient than with the 80-ps pulse, which was limited by the optical damage threshold of the input antireflective coating (1.6 W/μm2). These high-gain operations should enable semiconductor Raman amplifiers to be used for detecting signals from chemical or biological materials, in addition to infrared light frequency selective amplification with wavelength-division multiplexing in optical communications.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 2 )