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In this letter, we report results of small-signal modulation characteristics of self-assembled 1.3-μm InGaAs-GaAs quantum dot (QD) lasers at room temperature. The narrow ridge-waveguide lasers were fabricated with multistack InGaAs self-assembled QDs in active region. A high characteristic temperature of To=210 K with threshold current density of 200A/cm2 was obtained. Small-signal modulation bandwidth of f-3 dB=12 GHz was measured at 300 K with differential gain of dg/dn≅2.4×10-14 cm2 from detailed characteristics. We observed that a limitation of modulation bandwidth in high current injection appeared with gain saturation. This property can direct future high-speed QD laser design.
Date of Publication: Feb. 2004