Referenced Items are not available for this document.
In this letter, we report results of small-signal modulation characteristics of self-assembled 1.3-μm InGaAs-GaAs quantum dot (QD) lasers at room temperature. The narrow ridge-waveguide lasers were fabricated with multistack InGaAs self-assembled QDs in active region. A high characteristic temperature of To=210 K with threshold current density of 200A/cm2 was obtained. Small-signal modulation bandwidth of f-3 dB=12 GHz was measured at 300 K with differential gain of dg/dn≅2.4×10-14 cm2 from detailed characteristics. We observed that a limitation of modulation bandwidth in high current injection appeared with gain saturation. This property can direct future high-speed QD laser design.
Published in:
Photonics Technology Letters, IEEE
(Volume:16
,
Issue:
2
)
Date of Publication: Feb. 2004
- Page(s):
- 377 - 379
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 7968293
- Digital Object Identifier :
- 10.1109/LPT.2003.823088
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 February 2004
- Issue Date :
- Feb. 2004
- Sponsored by :
- IEEE Photonics Society
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