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In this paper, we present the characteristics of high-performance strain-compensated MOCVD-grown 1200-nm InGaAs and 1300-nm InGaAsN quantum-well (QW) lasers using AsH3 and U-Dimethylhydrazine as the group V precursors. The design of the InGaAsN QW active region utilizes an In-content of approximately 40%, which requires only approximately 0.5% N-content to realize emission wavelengths up to 1315-nm. Threshold current densities of only 65-90 A/cm2 were realized for InGaAs QW lasers, with emission wavelength of 1170-1233 nm. Room-temperature threshold and transparency current densities of 210 and 75-80 A/cm2, respectively, have been realized for InGaAsN QW lasers with emission wavelength of 1300-nm. Despite the utilization of the highly-strained InGaAsN QW, double-QW lasers have been realized with excellent lasing performance.