By Topic

High reliability of AlGaInP light-emitting diodes with tensile strain barrier-reducing Layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Juh-Yuh Su ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Taiwan, Taiwan ; Wen-Bin Chen ; Meng-Chi Wu ; Yan-Kun Su
more authors

A high-reliability multiple quantum-well AlGaInP light-emitting diode is grown by inserting a novel tensile strain barrier-reducing (TSBR) structure between the window and cladding layers. The TSBR (∼150 Å of Ga0.65In0.35P) film is of lattice size with valence band energy and is located between window and cladding layers, thus, significantly reducing band offset and device forward bias, and accordingly achieves improvement in dynamic resistance and junction heating. Reducing junction heating significantly enhances device reliability and lifetime. The TSBR layer also acts as a buffer layer, reducing band, and junction discontinuity between the misfit layers, an effect that can be attributed to reduced nonradiative recombination and defect density. Accordingly, TSBR is a successful design for improving global life behavior.

Published in:

Photonics Technology Letters, IEEE  (Volume:16 ,  Issue: 1 )