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A high-reliability multiple quantum-well AlGaInP light-emitting diode is grown by inserting a novel tensile strain barrier-reducing (TSBR) structure between the window and cladding layers. The TSBR (∼150 Å of Ga0.65In0.35P) film is of lattice size with valence band energy and is located between window and cladding layers, thus, significantly reducing band offset and device forward bias, and accordingly achieves improvement in dynamic resistance and junction heating. Reducing junction heating significantly enhances device reliability and lifetime. The TSBR layer also acts as a buffer layer, reducing band, and junction discontinuity between the misfit layers, an effect that can be attributed to reduced nonradiative recombination and defect density. Accordingly, TSBR is a successful design for improving global life behavior.