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Two new threshold voltage extractor circuits,will be presented. In order to achieve a full CMOS compatibility, only MOS transistors working in saturation will be used, resulting very small silicon areas consumption (22μmx15μm and 33μmx23μm, respectively). The quantitative evaluation of the threshold voltage computing error will be made taking into account the second-order effects, which affect the MOS transistor operation. The SPICE simulations confirm the theoretical estimations: a linear decreasing with temperature of the threshold voltage and relatively small values of the temperature coefficients of reference voltages (22ppm/K and 16ppm/K, respectively). The very small supply voltage (1.5V) makes the proposed circuits valuable for low-voltage applications.