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MOSFET mobility degradation modelling

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3 Author(s)
Babarada, F. ; Univ. "Politehnica" of Bucharest, Romania ; Profirescu, M.D. ; Rusu, A.

The design of linear analog circuits lacks models for state-of-the-art MOS transistors to accurately describe distortion effects. This is mainly due to inaccurate modelling of the mobility degradation effect i.e. the dependence of carrier mobility in the inversion layer on the normal electric (gate) field. A new mobility relation in agreement with experiment was obtained using quantum mechanical transport analysis.

Published in:

Semiconductor Conference, 2003. CAS 2003. International  (Volume:2 )

Date of Conference:

28 Sept.-2 Oct. 2003