Cart (Loading....) | Create Account
Close category search window

Characterization of the thin oxides degradation through Fowler-Nordheim current

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Cosmin, P.A. ; Catalyst Semicond., Inc., Sunnyvale, CA, USA ; Badila, M. ; Dunca, T.

The paper makes a survey of tunnel oxide constant-current stress measurement method as a basis to characterize the oxide capability to sustain a large number (>106) positive and negative current pulses operating at high temperature. The time-dependent-dielectric-breakdown (TDDB) method appears to be a complete rapid and accurate oxide characterization if some precautions are taken.

Published in:

Semiconductor Conference, 2003. CAS 2003. International  (Volume:2 )

Date of Conference:

28 Sept.-2 Oct. 2003

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.