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Characterization of the thin oxides degradation through Fowler-Nordheim current

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3 Author(s)
Cosmin, P.A. ; Catalyst Semicond., Inc., Sunnyvale, CA, USA ; Badila, M. ; Dunca, T.

The paper makes a survey of tunnel oxide constant-current stress measurement method as a basis to characterize the oxide capability to sustain a large number (>106) positive and negative current pulses operating at high temperature. The time-dependent-dielectric-breakdown (TDDB) method appears to be a complete rapid and accurate oxide characterization if some precautions are taken.

Published in:

Semiconductor Conference, 2003. CAS 2003. International  (Volume:2 )

Date of Conference:

28 Sept.-2 Oct. 2003

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