Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Multicell circuit model for high-power thyristor-type semiconductor devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Schroder, S. ; Inst. for Power Electron. & Electr. Drives, Aachen Univ., Germany ; Detjen, D. ; De Doncker, R.W.A.A.

New device models for circuit simulation are developed for high-power thyristor-type devices, such as gate-turn-off thyristors, integrated gate-commutated thyristors, and MOS turn-off thyristors. These models are based on semiconductor physics, which guarantees a wide range of validity. In particular, the proposed models are based on the lumped charge approach. Coupled electrical and thermal behavior is implemented to allow transient thermal simulations. To account for the nonuniform current distribution during turn-off, several of these single-cell models are connected in parallel to simulate a complete device. Simulation results are compared with measurements.

Published in:

Industry Applications, IEEE Transactions on  (Volume:39 ,  Issue: 6 )