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A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM

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17 Author(s)
Uk-Rae Cho ; SRAM Memory Div., Samsung Electron., Gyeonggi-Do, South Korea ; Tae-Hyoung Kim ; Yong-Jin Yoon ; Jong-Cheol Lee
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A 1.2-V 72-Mb double data rate 3 (DDR3) SRAM achieves a data rate of 1.5 Gb/s using dynamic self-resetting circuits. Single-ended main data lines halve the data line precharging power dissipation and the number of data lines. Clocks phase shifted by 0°, 90°, and 270° are generated through the proposed clock adjustment circuits. The latter circuits make input data sampled with an optimized setup/hold window. On-chip input termination with a linearity error of ±4.1% is developed to improve signal integrity at higher data rates. A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM is fabricated in a 0.10-μm CMOS process with five metals. The cell size and the chip size are 0.845 μm2 and 151.1 mm2, respectively.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:38 ,  Issue: 11 )