Skip to Main Content
This work reports on the application of laser beam induced current (LBIC) to the determination of the product of zero-bias dynamic resistance and area, R0A, of homojunction photodiodes. The technique involves using LBIC to measure temperature dependent values of the photocarrier spreading length of a particular device, and then fitting the theoretical temperature dependence. The photocarrier spreading length is a measure of the rate of decay of photoinduced forward bias of the p-n junction with distance from the location of electron-hole pair generation and is partly responsible for the shape of the LBIC profile. The LBIC magnitude is not required to be measured in any quantitative sense, although there is a requirement that the photocarrier spreading length be shorter than the device length in order for it to be measurable. The technique provides a non-contact method of determining the performance of individual devices within large two-dimensional focal plane arrays of photodiodes. Experimental results from Hg0.77Cd0.23Te infrared photodiodes are presented to demonstrate the procedure.
Date of Conference: 11-13 Dec. 2002