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A 1.0 V 256 Mb SDRAM with offset-compensated direct sensing and charge-recycled precharge schemes

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12 Author(s)
Sim, J.Y. ; Memory Div., Samsung Electron., Hwasung, South Korea ; Kwon, K.W. ; Choi, J.H. ; Lee, S.H.
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A 1.0 V, 256 Mb SDRAM is designed in a 0.1 /spl mu/m CMOS technology. For low voltage applications, an offset compensated direct current sensing scheme improves refresh time as well as sensing performance. A charge-recycled precharge reuses the word-line discharge current to generate the boosted voltage required for equalization without charge pumping. At 1.0 V, the access time is 25 ns and the current is 15 mA.

Published in:

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Date of Conference:

13-13 Feb. 2003