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512 Mb PROM with 8 layers of antifuse/diode cells

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14 Author(s)
Crowley, M. ; Matrix Semicond., Santa Clara, CA, USA ; Al-Shamma, A. ; Bosch, D. ; Farmwald, M.
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A 3.3 V, 512 Mb PROM uses a transistorless memory cell containing an antifuse and diode. A bit area of 1.4F/sup 2/ including all overhead is achieved by stacking cells 8 high above the 0.25 /spl mu/m CMOS substrate. Read bandwidth is 1 MB/s and write bandwidth is 0.5 MB/s. A 72 b Hamming code provides fault tolerance.

Published in:

Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International

Date of Conference:

13-13 Feb. 2003