Referenced Items are not available for this document.
A 3.3 V, 512 Mb PROM uses a transistorless memory cell containing an antifuse and diode. A bit area of 1.4F2 including all overhead is achieved by stacking cells 8 high above the 0.25 μm CMOS substrate. Read bandwidth is 1 MB/s and write bandwidth is 0.5 MB/s. A 72 b Hamming code provides fault tolerance.
Published in:
Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. 2003 IEEE International
Date of Conference: 2003
- Page(s):
- 284 - 493 vol.1
- ISSN :
- 0193-6530
- Print ISBN:
- 0-7803-7707-9
- INSPEC Accession Number:
- 7785769
- Digital Object Identifier :
- 10.1109/ISSCC.2003.1234303
- Product Type:
- Conference Publications
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