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The Bosch etch process was utilized to create 50 micrometer vias with an aspect ration of 10:1 in silicon wafers for through wafer interconnects. The process is complex with twenty-two separate parameters required to control the process. Deviating from the standard process and flowing SF6 during the deposition process resulted in a more stable and reproducible process.
Date of Conference: 30 June-2 July 2003