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A 1-V CMOS/SOI bluetooth RF transceiver for compact mobile applications

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5 Author(s)
Ugajin, M. ; NTT Microsyst. Integration Lab., Kanagawa, Japan ; Yamagishi, A. ; Kodate, J. ; Harada, M.
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A Bluetooth RF transceiver in 0.2-/spl mu/m CMOS/SOI achieves 1-V operation and paves the way for further system-size reduction by using a small NiH battery. The transceiver integrates a T/R switch, an image-reject mixer, a quadrature demodulator, gm-C filters, an LC-tank voltage-controlled oscillator, a PLL, and a power amplifier. The phase shifter in the quadrature demodulator is tuned dynamically to deal with carrier-frequency drift. A gm cell in the filters uses depletion-mode PMOS transistors and has a folded structure. The transceiver shows -77-dBm sensitivity at 0.1% BER.

Published in:

VLSI Circuits, 2003. Digest of Technical Papers. 2003 Symposium on

Date of Conference:

12-14 June 2003