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This letter reports the demonstration of the first 4H-SiC Schottky barrier diode (SBD) blocking over 10 kV based on 115-/spl mu/m n-type epilayers doped to 5.6 /spl times/ 10/sup 14/ cm/sup -3/ through the use of a multistep junction termination extension. The blocking voltage substantially surpasses the former 4H-SiC SBD record of 4.9 kV. A current density of 48 A/cm/sup 2/ is achieved with a forward voltage drop of 6 V. The Schottky barrier height, ideality factor, and electron mobility for this very thick epilayer are reported. The SBD's specific-on resistance is also reported.