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High current gain 4H-SiC npn bipolar junction transistors

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2 Author(s)
Chih-Fang Huang ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; J. A. Cooper

The authors report a common emitter current gain /spl beta/ of 55 in npn epitaxial-emitter 4H-SiC bipolar junction transistors. The spacing between the p+ base contact implant and the edge of the emitter finger is critical in obtaining high-current gain. V/sub CEO/ of these devices is 500 V, and V/sub CBO/ is 700 V.

Published in:

IEEE Electron Device Letters  (Volume:24 ,  Issue: 6 )