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An HTS X-band DC SQUID based amplifier: modeling and development concepts

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4 Author(s)
Prokopenko, G.V. ; Inst. of Radio Eng. & Electron., Russian Acad. of Sci., Moscow, Russia ; Shitov, S.V. ; Borisenko, I.V. ; Mygind, J.

We present an X-band amplifier concept based on a HTS grain boundary dc SQUID, which allow for extended dynamic range for use with SIS mixers, e.g., as a buffer amplifier in front of an RSFQ ADC, or possibly for satellite and cellular phone communications. The proposed RF design is based on a combination of single-layer slot and coplanar lines forming novel input and output circuits. The following parameters (per stage) are obtained via simulation for central frequency 11 GHz: bandwidth 0.5-1 GHz, power gain 11-12 dB, noise temperature 5-10 K. A saturation product as high as 500-1000 K·GHz is estimated for a characteristic voltage of 1-2 mV. The realization of these parameters makes HTS SQA competitive with existing coolable HEMT-amplifiers for radio astronomy and satellite communication.

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Applied Superconductivity, IEEE Transactions on  (Volume:13 ,  Issue: 2 )