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NIST is using and developing superconductor-normal metal-superconductor (SNS) Josephson arrays for both programmable DC and AC voltage standards. Increasing the output voltage is difficult because the output voltage per junction is small; hence series arrays with large numbers of junctions are needed. The best way to generate higher voltages and achieve the best operating margins for the broadband drive signals is by densely packing the junctions into shorter arrays. NIST has been working on stacked SNS junctions to achieve this goal. By stacking junctions in the array, more junctions may be placed per length, while preserving a lumped microwave element. In this paper we introduce our results on stacked SNS junctions using MoSi2 and Ti as barrier materials. These barriers were chosen because they can be reactive-ion etched (RIE) in contrast to our standard PdAu barriers, which must be wet etched. Using RIE, alternating layers of barrier material and Nb may be etched in a single step. We indirectly quantify the junction uniformity in the arrays by measuring the current range of the constant-voltage steps when the arrays are biased with a microwave drive.