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Development of IEEE802.11a WLAN LNA in silicon-based processes

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6 Author(s)
B. Banerjee ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; B. Matinpour ; C. H. Lee ; S. Venkataraman
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We describe the effects of substrate parasitics in silicon-based processes and present a methodology for designing low-noise amplifiers (LNAs) in silicon processes. Our techniques resulted in excellent agreement between simulations and measurements for a test case LNA design for 802.11a. This LNA, which covers 5-6 GHz and has gain switching is designed in a 0.8 μm SiGe bipolar technology with f/sub T/ of 50 GHz. The LNA exhibits a gain of more than 24 dB in the 5-6 GHz band with a noise figure (NF) less than 2.5 dB. The agreement between simulation and measured data is demonstrated.

Published in:

Microwave Symposium Digest, 2003 IEEE MTT-S International  (Volume:3 )

Date of Conference:

8-13 June 2003