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Destructive single-event effects in semiconductor devices and ICs

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1 Author(s)
Sexton, F.W. ; Sandia Nat. Labs., Albuquerque, NM, USA

Developments in the field of destructive single-event effects over the last 40 years are reviewed. Single-event latchup, single-event burnout, single-event gate rupture, and single-event snap-back are discussed beginning with the first observation of each effect, its phenomenology, and the development of present day understanding of the mechanisms involved.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:50 ,  Issue: 3 )

Date of Publication:

June 2003

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