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Radiation effects and hardening of MOS technology: devices and circuits

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2 Author(s)
H. L. Hughes ; U.S. Naval Res. Lab., Washington, DC, USA ; J. M. Benedetto

Total ionizing dose radiation effects on the electrical properties of metal-oxide-semiconductor devices and integrated circuits are complex in nature and have changed much during decades of device evolution. These effects are caused by radiation-induced charge buildup in oxide and interfacial regions. This paper presents an overview of these radiation-induced effects, their dependencies, and the many different approaches to their mitigation.

Published in:

IEEE Transactions on Nuclear Science  (Volume:50 ,  Issue: 3 )